misfit dislocation
英 [ˈmɪsfɪt ˌdɪsləˈkeɪʃn]
美 [ˈmɪsfɪt ˌdɪsloʊˈkeɪʃn]
网络 失配位错; 错配位错; 错配差排; 失配差排; 差排缺陷
双语例句
- The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。 - The misfit dislocation network plays an important role in strength enhancement of Cu/ Ni multilayers because of its resistant to glide dislocations. But the strengthening relies on the wavelength, which was defined as the thickness of adjacent two layers in multilayers.
结果表明，失配位错网对滑移位错的阻碍作用使Cu/Ni多层膜得以强化，并且这种强化作用依赖于多层膜的调制波长（相邻两膜层的厚度之和）。 - In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.
在考虑存在失配位错的情况下，计算了驰豫晶格失配、曲率半径和失配位错密度。 - Conditions for formation of misfit dislocation in epitaxial films& a molecular dynamics study
外延生长薄膜中失配位错形成条件的分子动力学模拟研究 - Misfit Characters Effect on the Dislocation Structure and Nucleation Mechanism in FCC Epitaxial Crystals
失配性质对面心立方外延晶体失配位错结构及其形核机制的影响 - Molecular dynamics simulations for the formation of misfit dislocation in compressive epitaxial aluminum films have been carried out.
运用分子动力学方法对负失配条件下的外延铝簿膜中失配位错的形成进行了模拟研究。 - The misfit dislocations are pure edge dislocation and that can be transformed to threading dislocations via slip.
失配位错为纯刃型位错，可通过滑移面的改变而形成穿透位错； - When the wavelength was bigger than the critical value λ_c, the stress field of misfit dislocation was independent on the wavelength.
当调制波长大于临界值λc时，失配位错的应力场随膜层厚度变化不大； - It was found that there exists obvious gradient distribution of elastic modulus and microhardness around the reinforcement particles, which is the result of the gradient distribution of the reinforcing precipitates caused by the gradient distribution of the thermal misfit dislocation density.
采用显微力学探针技术研究了复合材料的时效行为，发现在增强颗粒附近存在明显的弹性模量和硬度的梯度分布，是热错配应力造成的位错密度分布引起的析出相梯度分布的结果。 - It can be concluded that the defects in the low temperature Si buffer will block the motion of misfit dislocation.
由此可以推断出，低温硅（LT-Si）缓冲层中点缺陷对失配位错运动具有阻碍作用。